Page 160 - Профессор багш нарын бүтээлийн ном зүй II боть

Ном, сурах бичиг, гарын авлага
2269. Optoelectrical properties of Ge-based photodetectors with graphene / Editor Choi-
Chel Jong.- Korea: Lambert Publishing, 2018.- 200p.- ISBN 978-613-85556-8.
Редакторласан, орчуулсан бүтээл
2270. Микропроцессорын систем: Гарын авлага / Ц.Хүрэлбаатар, Р.Бямбажав,
Б.Энхбат.; Ред. Б.Зоригтбаатар, Д.Энхзул.- УБ.: Мөнх аръяа, 2016.- 74х.
2271. Микрокомпьютерын програмчлал, бодлого дасгалын хураамж /
Ц.Хүрэлбаатар, Р.Бямбажав, Б.Энхбат.; Ред. Б.Зоригтбаатар, Д.Энхзул.- УБ.:
Мөнх Аръяа, 2017.- 84х.
Эрдэм шинжилгээний илтгэл өгүүлэл
2272. Dependence of growth temperature on morphology evolution and crystal
orientation of tellurium (Te) micro and nanostructures / Kh.Zagarzusem, Jung-
Hwan Hyung, Gil Sung Kim, Alok Kumar Rai, Chan-Oh Jang, Chan-Yang Lee,
Susant Kumar Acharya, Sang-Kwon Lee // The 15-th international symposium on
the physics of semiconductors and applications.- South Korea, 2011.
2273. Dependence of the morphology evolution and crystal orientation of tellurium (Te)
micro-and nanostructures on the growth temperature / Kh.Zagarzusem, Jung-Hwan
Hyung, Gil-Sung Kim, Alok Kumar Rai, Chan-Oh Jang, Chan-Yang Lee, Susant
Kumar Acharya, and Sang-Kwon Lee // Journal of the Korean physical society.-
South Korea, 2012.- №65.- P.47-50.
2274. Temperature dependent transfer characteristics of graphene field effect transistors.-
Analysis of current-voltage-temperature (I-V-T) and capacitance-voltage-
temperature (C-V-T) characteristics of Au/n-Si Schottky barrier diode with
PEDOT:PSS interfacial layer / Kh.Zagarzusem, Gil Sung Kim, and Chel-Jong Choi
// International conference on advanced electromaterials.- South Korea, 2013.
2275. Electrical properties of Au/n-Ge Schottky barrier diode with graphene i Nterlayer
/ Kh.Zagarzusem, Chel-Jong Choi, Gil Sung Kim, B. Daohenug, Sang Kwon Lee,
Kyu-Hwan Shim // Asia-Pacific workshop on fundamentals and applications of
advanced semiconductor devices (AWAD).- South Korea, 2013.
2276. A comparative study of IR Ge photodiodes with a Schottky barrier contact and
metal-semiconductor-metal structure / Kh.Zagarzusem, Yeon-Ho Kil, Hun Ki Lee,
Jong-Han Yang, Sukill Kang, Taek Sung Kim, and Kyu-Hwan Shim // Journal of
the Korean physical society.- South Korea, 2014.- №65.- P.2100-2106.
2277. Electroluminescence of p-Ge/i-Ge/n-Si heterojunction pin leds / Kh.Zagarzusem,
Yeon-Ho Kil, Jong-Han Yang, Sukill Kang, Tae Soo Jeong, Chel-Jong Choi, Taek
Sung Kim, and Kyu-Hwan Shim // Journal of the Korean physical society.- South
Korea, 2014.- №64.- P.98-103.
2278. Electrical transport characterization of PEDOT: PSSn-Si Schottky diodes and their
applications in solar cells / Kh.Zagarzusem, Jung-Hwan Hyung, Gil-Sung Kim,
No-Won Park, Kyu-Hwan Shim, and Sang-Kwon Lee // Journal of nanoscience
and nanotechnology.- South Korea, 2014.- №14.- P.4394-4399.
2279. Modification of Schottky barrier properties of Au/n-type Ge Schottky barrier diode
using monolayer rapheme interlayer / Kh.Zagarzusem, Yeon-Ho Kil, Hyung-Joong
Yun, Kyu-Hwan Shim, Jung Tae Nam, Keun-Soo Kim, Sang-Kwon Lee and Chel-
Jong Choi // Journal of alloys and compounds.- South Korea, 2014.- №614.-
P.323-329.
2280. Optoelectrical characterization of infrared photodetector fabricated on Ge-on-Si
substrate / Kh.Zagarzusem, Yeon-Ho Kil, Taek Sung Kim, Kyu-Hwan Shim,